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HCF4007UB 반도체 회로 부품 판매점

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STMicroelectronics 로고
STMicroelectronics
HCF4007UB 데이터시트, 핀배열, 회로
HCF4007UB
DUAL COMPLEMENTARY PAIR PLUS INVERTER
s STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
s MEDIUM SPEED OPERATION
tPD = 30ns (Typ.) AT 10V
s QUIESCENT CURRENT SPECIFIED UP TO
)20V
t(ss 5V, 10V AND 15V PARAMETRIC RATINGS
s INPUT LEAKAGE CURRENT
ucII = 100nA (MAX) AT VDD = 18V TA = 25°C
ds 100% TESTED FOR QUIESCENT CURRENT
ProDESCRIPTION
The HCF4007UB is a monolithic integrated circuit
tefabricated in Metal Oxide Semiconductor
letechnology available in DIP and SOP packages.
oThe HCF4007UB type is comprised of three
sn-channel and three p-channel enhancement type
bMOS transistors. The transistor elements are
Oaccessible through the package terminals to
-provide a convenient means for constructing the
)various typical circuits as shown in typical
DIP SOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
HCF4007UBEY
HCF4007UBM1
T&R
HCF4007UM013TR
applications. More complex functions are possible
using multiple packages. Number shown in
parentheses indicate terminals that are connected
together to form the various configuration listed.
Obsolete Product(sPIN CONNECTION
March 2004
1/9


HCF4007UB 데이터시트, 핀배열, 회로
HCF4007UB
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
SYMBOL NAME AND FUNCTION
2, 11
SP2, SP3
Source Connections to
2nd and 3rd p-channel
transistors
13, 1
DP1, DP2
Drain Connections from
the 1st and 2nd p-channel
transistors
Drain Connections from
8, 5 DN1, DN2 the 1st and 2nd n-channel
transistors
lete Product(s)LOGIC DIAGRAM
4, 9
12
6, 3, 10
7
14
SN2, SN3
DN/P3
G1 to G3
VSS
VDD
Source Connections to
the 2nd and 3rd n-channel
Common connection to
the 3rd p-channel and
n-channel transistor
drains
Gate connections to
n-channel and p-channel
of the three transistor
pairs
Negative Supply Voltage
Positive Supply Voltage
bsoABSOLUTE MAXIMUM RATINGS
- OSymbol
Parameter
Value
Unit
t(s)VDD Supply Voltage
VI DC Input Voltage
ucII DC Input Current
dPD Power Dissipation per Package
roPower Dissipation per Output Transistor
PTop Operating Temperature
teTstg Storage Temperature
-0.5 to +22
-0.5 to VDD + 0.5
± 10
200
100
-55 to +125
-65 to +150
V
V
mA
mW
mW
°C
°C
leAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
soAll voltage values are referred to VSS pin voltage.
ObRECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VI
Top
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to VDD
-55 to 125
Unit
V
V
°C
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HCF4007UB inverter

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