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Siemens Semiconductor Group |
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor
NPN: R1 = 47kΩ, R2 = 47kΩ
PNP: R1 = 2.2kΩ, R2 = 47kΩ
Tape loading orientation
BCR 48PN
Type
Marking Ordering Code Pin Configuration
Package
BCR 48PN WTs
Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
NPN
Emitter-base voltage
PNP
DC collector current
NPN
DC collector current
PNP
Input on voltage
NPN
Input on voltage
PNP
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
VEBO
IC
IC
Vi(on)
Vi(on)
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Values
50
50
10
5
70
100
50
10
250
150
- 65 ... + 150
Unit
V
mA
V
mW
°C
≤ 275
≤ 140
K/W
Semiconductor Group
1
Dec-09-1996
BCR 48PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
70
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
R1/R2
32
0.9
fT
-
Ccb
-
-
-
-
-
-
-
-
-
47
1
100
3
max.
-
-
100
164
-
0.3
1.5
3
62
1.1
-
-
Unit
V
nA
µA
-
mV
V
kΩ
-
MHz
pF
Semiconductor Group
2
Dec-09-1996
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