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PDF 2PG006 Data sheet ( Hoja de datos )
| Número de pieza | 2PG006 | |
| Descripción | Silicon N-channel enhancement IGBT | |
| Fabricantes | Panasonic | |
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IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
2PG006
Silicon N-channel enhancement IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
High-speed switching: tf = 175 ns (typ.)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (E-B short)
VCES
430
V
Gate-emitter voltage (E-B short)
VGES –30 to +35
V
Collector current
IC 40 A
Peak collector current *
ICP 230
A
Power dissipation
40 W
Ta = 25°C
PC
2.0
W
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%)
But, it must stay within 40% of all that the time impressed pulse repetitively.
Package
Code
TO-220D-A1
Marking Symbol: 2PG006
Pin Name
1. Gate
2. Collector
3. Emitter
Internal Connection
C
G
E
T ≤ 5.0 00µs, On-duty ≤ 20%
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-emitter voltage (E-B short)
Collector-emitter cutoff current (E-B short) *
Gate-emitter cutoff current (E-B short)
VCES
ICES
IGES
IC = 1 mA, VGE = 0
VCE = 344 V, VGE = 0
VGE = ±35 V, –30 V, VCE = 0
430
Gate-emitter threshold voltage
VGE(th) VCE = 10 V, IC = 1.0 mA
3.0
Collector-emitter saturation voltage
Collector-emitter reverse break down voltage
Short-circuit input capacitance (Common emitter)
Short-circuit output capacitance (Common emitter)
Reverse transfer capacitance (Common emitter)
VCE(sat)
–VCE
Cies
Coes
Cres
VGE = 15 V, IC = 40 A
IC = –100 mA, VGE = 15 V
VCE = 25 V, VGE = 0, f = 1 MHz
1.75
18 22.5
1 200
130
20
Gate charge load
Qg
54
Gate-emitter charge
Qge VCC = 200 V, IC = 40 A, VGE = 15 V
7
Gate-collector charge
Qgc
22
Turn-on delay time
td(on)
65
Rise time
Turn-off delay time
tr
td(off)
VCC = 200 V, IC = 40 A,
RL ≈ 5 Ω, VGE = 15 V
400
185
Fall time
tf
175
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ICES is 100% tested according to the ICES inspection standards. (< 1.0 mA under the conditions of VCE = 344 V, VGE = 0)
Max
5.0
±1.0
5.5
2.4
260
Publication date: February 2009
SJN00006AED
Unit
V
mA
mA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2PG006.PDF ] | |
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