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BM63364S-VA 반도체 회로 부품 판매점

600V IGBT Intelligent Power Module



ROHM Semiconductor 로고
ROHM Semiconductor
BM63364S-VA 데이터시트, 핀배열, 회로
Datasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for low speed switching drive
BM63364S-VA BM63364S-VC
General Description
BM63364S-VA/-VC is an Intelligent Power Module
composed of gate drivers, bootstrap diodes, IGBTs, fly
wheel diodes. Low saturation voltage IGBTs optimized
for low speed switching drive (to 6kHz) such as a
compressor is adopted. Please examine high speed
switching series for high speed switching drive.
Key Specifications
IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ)
FWD Forward Voltage VF:
1.5V(Typ)
FWD Reverse Recovery Time trr:
Module Case Temperature TC:
100ns(Typ)
-25 to +100°C
Junction Temperature Tjmax:
150°C
Features
3phase DC/AC Inverter
600V/15A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3V, 5V Line
Package
HSDIP25
HSDIP25VC
HSDIP25
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
38.0mm x 24.0mm x 3.5mm
Application
Low Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
Low Speed Switching Drive of Compressor Motor for
Air Conditioner, Washing Machine, Refrigerator
Typical Application Circuit
+
+
+
5V
2 VBU
3 VBV
4 VBW
5 HINU
6 HINV
7 HINW
8 HVCC
9 GND
10 LINU
11 LINV
12 LINW
13 LVCC
15V +
14 FO
15 CIN
16 GND
P 24
U 23
V 22
W 21
NU 20
M
+
NV 19
NW 18
Figure 1. Example of Application Circuit
Product structure: Semiconductor IC This product is not designed for protection against radioactive rays
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/20
TSZ02201-0747AB500060-1-2
11.Nov.2014 Rev.002


BM63364S-VA 데이터시트, 핀배열, 회로
BM63364S-VA BM63364S-VC
Pin Configuration
17
NC
GND
CIN
FO
LVCC
LINW
LINV
LINU
GND
HVCC
HINW
HINV
HINU
VBW
VBV
TOP VIEW
12.6mm
9.2mm
Tc detecting point
18
18 NW
19 NV
20 NU
21 W
22 V
23 U
24 P
VBU
NC
1
25 NC
25
Figure 2. Pin Configuration and Tc Detecting Point
Pin Description
Pin No. Pin Name
Function
Pin No. Pin Name
Function
1 NC No connection(GND potential)
2 VBU U phase floating control supply
3 VBV V phase floating control supply
4 VBW W phase floating control supply
14 FO Alarm output
15
CIN
Detecting of short circuit current
trip voltage
16
GND
Ground (Note 1)
17 NC No connection (Note 2)
5 HINU U phase high side IGBT control
18 NW W phase low side IGBT emitter
6 HINV V phase high side IGBT control
19 NV V phase low side IGBT emitter
7 HINW W phase high side IGBT control 20 NU U phase low side IGBT emitter
8 HVCC Control supply for HVIC
9
GND
Ground (Note 1)
21 W W phase output
22 V V phase output
10 LINU U phase low side IGBT control
23 U U phase output
11 LINV V phase low side IGBT control
12 LINW W phase low side IGBT control
24 P Inverter supply
25 NC No connection (Note 2)
13 LVCC Control supply for LVIC
(Note 1) Two GND pins (9 & 16pin) are connected inside IPM, please connect one pin (16pin is recommended) to the 15V power supply GND outside and
leave the other open.
(Note 2) NC pins (17 & 25pin) are not electrically connected to any other potential inside.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/20
TSZ02201-0747AB500060-1-2
11.Nov.2014 Rev.002




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600V IGBT Intelligent Power Module - ROHM Semiconductor



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