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IKP04N60T 반도체 회로 부품 판매점

IGBT



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Infineon
IKP04N60T 데이터시트, 핀배열, 회로
IKP04N60T
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5µs
Designed for:
- Frequency Converters
- Drives
TRENCHSTOPTM and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
C
G
E
Type
IKP04N60T
VCE
600V
IC
VCE(sat),Tj=25°C
Tj,max
4A
1.5V
175°C
Marking
K04T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25°C
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175°C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
1) J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Value
600
9.5
6.5
12
12
9.5
6.5
12
±20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
IFAG IPC TD VLS
1
Rev. 2.8 17.02.2016


IKP04N60T 데이터시트, 핀배열, 회로
IKP04N60T
TRENCHSTOPTM Series
q
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
3.5
5
62
Unit
K/W
Electrical Characteristic, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=4A
Tj=25°C
Tj=175°C
VGE=0V, IF=4A
Tj=25°C
Tj=175°C
IC= 60µA,VCE=VGE
VCE=600V, VGE=0V
Tj=25°C
Tj=175°C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=4A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
Cies
Coes
Cres
QGate
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=4A
VGE=15V
VGE=15V,tSC5µs
VCC = 400V,
T j 150° C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
min.
Value
Typ.
Unit
max.
600 -
-
- 1.5 2.05
- 1.9 -
V
- 1.65 2.05
- 1.6 -
4.1 4.9 5.7
µA
- - 40
- - 1000
- - 100 nA
- 2.2 - S
-Ω
- 252 -
- 20 - pF
- 7.5 -
--
27 nC
--
7 nH
--
36 A
IFAG IPC TD VLS
2
Rev. 2.8 17.02.2016




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