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IKB15N60T 반도체 회로 부품 판매점

IGBT



Infineon 로고
Infineon
IKB15N60T 데이터시트, 핀배열, 회로
IKB15N60T
TRENCHSTOPSeries
q
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IKB15N60T
VCE
600V
IC
15A
VCE(sat),Tj=25°C
1.5V
Tj,max Marking Code
175C
K15T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
26
23
45
45
26
23
45
20
5
130
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 11.05.2015


IKB15N60T 데이터시트, 핀배열, 회로
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
IKB15N60T
TRENCHSTOPSeries
q
Symbol
RthJC
RthJCD
RthJA
Conditions
6cm² Cu
Max. Value
1.15
1.9
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=15A
Tj=25C
Tj=175C
VGE=0V, IF=15A
Tj=25C
Tj=175C
IC=210µA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
8.7
-
Unit
max.
-V
2.05
-
2.05
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=15A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
T j 150C
-
-
-
-
-
-
860
55
24
87
7
137.5
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.8 11.05.2015




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