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Infineon |
IGC89T170S8RM
IGBT3 Power Chip
Features:
1700V Trench + Field stop technology
low switching losses
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
power modules
Applications:
drives
Chip Type
VCE
IC
IGC89T170S8RM 1700V 75A
Die Size
8.85 x 10.09 mm2
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
8.85 x 10.09
6.634 x 7.874
1.674 x 0.899
mm2
89.3
190 µm
200 mm
280
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7773O, L7773T, L7773E, Edition 0.9, 27.06.2014
IGC89T170S8RM
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, Tvj =25 C
DC collector current, limited by Tvj max
VCE
IC
1700
1)
V
A
Pulsed collector current, tp limited by Tvj max
Ic,puls
225 A
Gate emitter voltage
VGE
20 V
Junction temperature range
Operating junction temperature
Short circuit data 2 ) VGE = 15V, VCC = 1000V, Tvj = 150°C
Tvj
Tvj
tSC
-40 ... +175
-40...+150
10
°C
C
µs
Reverse bias safe operating area 2 ) (RBSOA)
1 ) depending on thermal properties of assembly
I C , m a x = 150A, V C E , m a x = 1700V
Tvj 1 5 0 ° C
2 ) not subject to production test - verified by design/characterization
Static Characteristic (tested on wafer), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V(BR)CES
VGE=0V , IC= 2 mA 1700
VCEsat
VGE=15V, IC=75A
1.6 1.9 2.2 V
VGE(th)
IC=3mA , VGE=VCE
5.2 5.8 6.4
ICES VCE=1700V , VGE=0V
4 µA
IGES VCE=0V , VGE=20V
300 nA
rG 8.5
Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Reverse transfer capacitance
Cies
Cres
VCE=25V,
VGE=0V,
f=1MHz
6800
220
pF
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7773O, L7773T, L7773E, Edition 0.9, 27.06.2014
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