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IGC168T170S8RH 반도체 회로 부품 판매점

IGBT3 Power Chip



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IGC168T170S8RH 데이터시트, 핀배열, 회로
IGC168T170S8RH
IGBT3 Power Chip
Features:
1700V Trench + Field stop technology
low switching losses and saturation losses
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
power modules
Applications:
drives
Chip Type
VCE
IC
Die Size
IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
13.38 x 12.58
11.159 x 10.353
1.674 x 0.899
mm2
168.3
190 µm
200 mm
142
Photoimide
3200 nm AlSiCu
Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793N, L7793U, L7793F, Rev 0.9, 27.06.2014


IGC168T170S8RH 데이터시트, 핀배열, 회로
IGC168T170S8RH
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, Tvj =25 C
DC collector current, limited by Tvj max
VCE
IC
1700
1)
V
A
Pulsed collector current, tp limited by Tvj max
Ic,puls
450 A
Gate emitter voltage
VGE
20 V
Junction temperature range
Operating junction temperature
Short circuit data 2 ) VGE = 15V, VCC = 1000V, Tvj = 150°C
Tvj
Tvj
tSC
-40 ... +175
-40...+150
10
°C
C
µs
Reverse bias safe operating area 2 ) (RBSOA)
1 ) depending on thermal properties of assembly
I C , m a x = 300A, V C E , m a x = 1700V
Tvj 1 5 0 ° C
2 ) not subject to production test - verified by design/characterization
Static Characteristics (tested on wafer), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
3) Vcesat tested at lower current
V(BR)CES
VCEsat3)
VGE(th)
ICES
IGES
rG
VGE=0V , IC= 2 mA
VGE=15V, IC=150A
IC=6mA , VGE=VCE
VCE=1700V , VGE=0V
VCE=0V , VGE=20V
1700
1.55
5.2
1.85
5.8
5
2.15
6.4
8
300
V
µA
nA
Dynamic Characteristics (not subject to production test - verified by design / characterization), Tvj =25 C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Reverse transfer capacitance
Cies
Cres
VCE=25V,
VGE=0V,
f=1MHz
13500
430
pF
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793N, L7793U, L7793F, Rev 0.9, 27.06.2014




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