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IGC142T120T6RH 반도체 회로 부품 판매점

IGBT4 High Power Chip



Infineon 로고
Infineon
IGC142T120T6RH 데이터시트, 핀배열, 회로
IGC142T120T6RH
IGBT4 High Power Chip
FEATURES:
1200V Trench + Field Stop technology
low VCEsat
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
medium / high power modules
Applications:
medium / high power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC142T120T6RH 1200V 150A 11.31 x 12.56 m m2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
11.31 x 12.56
11.04 x 9.80
1.31 x 0.81
mm 2
142.1 / 113.1
140 µm
150 mm
90 grd
94
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007


IGC142T120T6RH 데이터시트, 핀배열, 회로
IGC142T120T6RH
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Collector-Emitter voltage , Tj=25 °C
DC collector current, limited by Tjmax
VC E
IC
1200
1)
V
A
Pulsed collector current, tp limited by Tjmax
Gate -Emitter voltage
Ic p u l s
VGE
450 A
±20 V
Operating junction temperature
Tj
-40 ... +175
°C
Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
tp
10 µs
Reverse bias safe operating area 2 ) (RBSOA)
IC max = 300A, VCE max = 1200V, Tvj max= 150°C
1) depending on thermal properties of assembly
2) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC= 6 mA
VGE=15V, IC=150A
1200
1.5
1.7
2.0
V
Gate -Emitter threshold voltage
VGE(th)
IC=6mA , VGE=VCE
5.0 5.8 6.5
Zero gate voltage collector current
ICES VCE=1200V , VGE=0V
20 µA
Gate -Emitter leakage current
IGES VC E=0V , VGE=20V
600 nA
Integrated gate resistor
RGint
5
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE =0V,
f=1MHz
9300
580
510
pF
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007




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