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IGC109T120T6RL 반도체 회로 부품 판매점

IGBT4 Low Power Chip



Infineon 로고
Infineon
IGC109T120T6RL 데이터시트, 핀배열, 회로
IGC109T120T6RL
IGBT4 Low Power Chip
Features:
1200V Trench + Field stop technology
low switching losses
positive temperature coefficient
easy paralleling
This chip is used for:
low / medium power modules
Applications:
low / medium power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.48 x 14.61
4 x (2.761 x 6.458)
0.811 x 1.31
mm 2
109.3 / 82.6
115 µm
150 mm
90 grd
126
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7742C, Edition 1, 31.10.2007


IGC109T120T6RL 데이터시트, 핀배열, 회로
MAXIMUM RATINGS
Parameter
IGC109T120T6RL
Symbol
Value
U nit
Collector-Emitter voltage , Tj=25 °C
DC collector current, limited by Tjmax
VC E
IC
1200
1)
V
A
Pulsed collector current, tp limited by Tjmax
Ic p u l s
330 A
Gate -Emitter voltage
VGE
±20 V
Operating junction temperature
Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
Tj
tp
-40 ... +175
10
°C
µs
Reverse bias safe operating area 2 ) (RBSOA)
1) depending on thermal properties of assembly
IC max = 220A, VCE max = 1200V, Tvj max= 150°C
2) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-Emitter breakdown voltage
Collecto r-Emitter saturation voltage
Gate -Emitter threshold voltage
Zero gate voltage collector current
Gate -Emitter leakage current
Integrated gate resistor
V(BR)CES VGE=0V , IC= 4.1 m A 1200
VCE(sat)
VGE=15V, IC=110A 1.55 1.8 2.05 V
VGE(th)
IC=4.1mA , VGE= VCE 5.0 5.8 6.5
ICES VCE=1200V , VGE=0V
14 µA
IGES VC E=0V , VGE=20V
600 nA
RGint
7.5
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Parameter
Symbol
Conditions
Value
Unit
min. typ. max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE =0 V,
f=1MHz
6800
440
375
pF
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7742C, Edition 1, 31.10.2007




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