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Número de pieza IKQ100N60TA
Descripción IGBT
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No Preview Available ! IKQ100N60TA Hoja de datos, Descripción, Manual

IGBT
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryantiparallelEmitterControlleddiode
IKQ100N60TA
600Vlowlossswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl

1 page




IKQ100N60TA pdf
TRENCHSTOPTMseries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.20mA
VGE=15.0V,IC=100.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=100.0A
Tvj=25°C
Tvj=175°C
IC=1.60mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=100.0A
IKQ100N60TA
min.
Value
typ.
max. Unit
600 -
-V
- 1.50 2.00 V
- 1.90 -
- 1.65 2.05 V
- 1.60 -
4.1 4.9 5.7 V
- - 40.0 µA
- 2500.0 -
- - 100 nA
- 63.0 - S
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=100.0A,
VGE=15V
VGE=15.0V,VCC400V,
tSC5µs
Tvj=150°C
Value
Unit
min. typ. max.
- 6230 -
- 360 - pF
- 175 -
- 610.0 - nC
- 13.0 - nH
- 802 - A
5 Rev.2.2,2014-11-21

5 Page





IKQ100N60TA arduino
TRENCHSTOPTMseries
IKQ100N60TA
1E+4
Cies
Coes
Cres
1600
1400
1200
1000
1000
800
600
100
400
200
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0
12 13 14 15 16 17 18 19 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE400V,startatTj150°C)
14
12
0.1
10
D=0.5
8
0.2
0.1
0.05
0.02
6
0.01
0.01 single pulse
4
2
i: 1 2 3 4 5 6
ri[K/W]: 7.9E-3 0.02027372 0.02064642 0.03120728 0.09632085 0.03448753
τi[s]: 2.0E-5 2.2E-4
1.3E-3
0.01240146 0.1069267 0.527093
0 0.001
10 11 12 13 14 15
1E-6 1E-5 1E-4 0.001 0.01 0.1
VGE,GATE-EMITTERVOLTAGE[V]
tp,PULSEWIDTH[s]
1
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE=400V,startatTj=25°C,Tjmax150°C)
Figure 20. IGBTtransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
11 Rev.2.2,2014-11-21

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