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FGA70N33BTD 반도체 회로 부품 판매점

70A PDP IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGA70N33BTD 데이터시트, 핀배열, 회로
FGA70N33BTD
330V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.7V @ IC = 70A
• High input impedance
• Fast switching
• RoHS Compliant
Applications
• PDP System
August 2011
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
ICpulse(1)*
IC pulse(2)*
PD
VRRM
IF(AV)
IFSM
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Peak Repetitive Reverse Voltage of Diode
Average Rectified Forward Current of diode @ TC = 100oC
Non-repetitive Peak Surge Current of diode
60Hz Single Half-Sine wave
TJ, Tstg
TL
Operating Junction Temperature and Storage Temperrature
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D< 0.01, pluse width < 5usec
*IC_pulse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGA70N33BTD Rev. C0
1
G
E
Ratings
330
± 30
160
220
149
60
330
10
100
-55 to +150
300
Typ.
--
--
--
Max.
0.84
1.16
40
Units
V
V
A
A
W
W
V
A
A
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com


FGA70N33BTD 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
Device
FGA70N33BTD FGA70N33BTDTU
Package
TO-3P
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
--
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
ΔBVCES/
ΔTJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
330 --
--
V
-- 0.3 -- V/oC
-- -- 250 μA
-- -- ±400 nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250μA, VCE = VGE
2.3 3.3 4.3
IC = 20A, VGE = 15V
-- 1.1 --
VCE(sat)
Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V,
-- 1.4 --
IC = 70A, VGE = 15V, TC = 25oC
--
1.7
--
IC = 70A, VGE = 15V,
TC = 125oC
-- 1.8 --
V
V
V
V
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-- 1380 --
-- 140 --
-- 60 --
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A,
VGE = 15V
-- 13 --
-- 26 --
-- 46 --
-- 198 --
-- 13 --
-- 28 --
-- 48 --
-- 268 --
-- 49 --
-- 6.8 --
-- 17.5 --
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGA70N33BTD Rev. C0
2
www.fairchildsemi.com




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FGA70N33BTD igbt

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70A PDP IGBT - Fairchild Semiconductor