파트넘버.co.kr FII50-12E 데이터시트 PDF


FII50-12E 반도체 회로 부품 판매점

IGBT phaseleg



IXYS 로고
IXYS
FII50-12E 데이터시트, 핀배열, 회로
NPT3 IGBT phaseleg
in ISOPLUS i4-PACTM
FII 50-12E
IC25 = 50 A
VCES = 1200 V
VCE(sat) typ. = 2.0 V
3
5
4
1
1
5
2
IGBTs
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
RthJH
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 90°C
VGE = ±15 V; RG = 39 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
=
900V;
VGE
=
±15
V;
R
G
=
39
;
TVJ
=
125°C
non-repetitive
50
32
50
VCES
10
A
A
A
µs
TC = 25°C
200 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
V
GE
=
±15
V;
R
G
=
39
2.0 2.6 V
2.3 V
4.5 6.5 V
0.4 mA
0.4 mA
200 nA
85 ns
50 ns
440 ns
50 ns
4.6 mJ
2.2 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 30 A
with heatsink compound
2 nF
250 nC
0.6 K/W
1.2 K/W
Features
• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670


FII50-12E 데이터시트, 핀배열, 회로
FII 50-12E
Diodes
Symbol
IF25
IF90
Conditions
TC = 25°C
TC = 90°C
Maximum Ratings
48 A
25 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
Erec(off)
RthJC
RthJS
Conditions
Characteristic Values
min. typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
2.4 2.8 V
1.8 V
51 A
180 ns
1.8 mJ
(per diode)
1.3 K/W
1.6 K/W
Component
Symbol
TVJ
Tstg
VISOL
FC
Conditions
IISOL 1 mA; 50/60 Hz
mounting force with clip
Maximum Ratings
-55...+150
-55...+125
°C
°C
2500
V~
20...120
N
Symbol
dS,dA
dS,dA
Weight
Conditions
pin - pin
pin - backside metal
Characteristic Values
min. typ. max.
1.7 mm
5.5 mm
9g
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 45 m
Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 m
Thermal Response
IGBT
Cth1 = 0.067 J/K; Rth1 = 0.108 K/W
Cth2 = 0.175 J/K; Rth2 = 0.491 K/W
Diode
Cth1 = 0.039 J/K; Rth1 = 0.337 K/W
Cth2 = 0.090 J/K; Rth2 = 0.963 K/W
Dimensions in mm (1 mm = 0.0394")
© 2003 IXYS All rights reserved
2-4




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: IXYS

( ixys )

FII50-12E igbt

데이터시트 다운로드
:

[ FII50-12E.PDF ]

[ FII50-12E 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FII50-12E

IGBT phaseleg - IXYS