G25T120 반도체 회로 부품 판매점
Low Loss IGBT
|
|
 Infineon |
TrenchStop® Series
IGW25T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IGW25T120 1200V 25A
1.7V
150°C G25T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
50
25
75
75
±20
10
190
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09
TrenchStop® Series
IGW25T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
0.65
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=25A
Tj=25°C
Tj=125°C
Tj=150°C
IC=1mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=25A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
16
8
Unit
max.
-V
2.2
-
-
6.5
mA
0.25
2.5
600
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=25A
VGE=15V
VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
1860
96
82
155
13
150
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.4 Nov. 09
|
PDF 파일 내의 페이지 : 총 12 페이지
제조업체: Infineon
( infineon )
G25T120 igbt
데이터시트 다운로드 :
[ G25T120.PDF ]
[ G25T120 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
