FGB20N60SF 반도체 회로 부품 판매점

20A Field Stop IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGB20N60SF 데이터시트, 핀배열, 회로
FGB20N60SF
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
GCE
D2-PAK
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB(FR4 or G-10 material)
C
G
E
Ratings
600
20
40
20
60
208
83
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. C1
1
www.fairchildsemi.com

FGB20N60SF 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGB20N60SF FGB20N60SF
D2-PAK
Reel
Reel Size
13” Dia
Tape Width
N/A
Quantity
800
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 A, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 20 A,
VGE = 15 V
600 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 5.0 6.5
- 2.2 2.8
- 2.4 -
V
V
V
- 940 -
- 110 -
- 40 -
pF
pF
pF
- 13 - ns
- 16 - ns
- 90 - ns
-
24 48
ns
- 0.37 -
mJ
- 0.16 -
mJ
- 0.53 -
mJ
- 12 - ns
- 16 - ns
- 95 - ns
- 28 - ns
- 0.4 - mJ
- 0.28 -
mJ
- 0.69 -
mJ
- 65 - nC
- 7 - nC
- 33 - nC
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. C1
2
www.fairchildsemi.com




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FGB20N60SF igbt

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