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PDF KGT25N120NDA Data sheet ( Hoja de datos )
| Número de pieza | KGT25N120NDA | |
| Descripción | NPT IGBT | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KGT25N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
QB
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES
1200
Gate-Emitter Voltage
VGES
20
Collector Current
@Tc=25
@Tc=100
50
IC
25
Pulsed Collector Current
ICM*
90
Diode Continuous Forward Current @Tc=100
IF 25
Diode Maximum Forward Current
IFM 150
Maximum Power Dissipation
@Tc=25
@Tc=100
310
PD
125
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
V
V
A
A
A
A
A
W
W
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R JC
R JC
R JA
MAX.
0.4
2.8
40
UNIT
/W
/W
/W
TO-3P(N)-E
C
G
E
E
C
G
2009. 10. 29
Revision No : 0
1/8
1 page  
KGT25N120NDA
Typical Performance Characteristics (Continued)
Fig 7. Turn-On Characteristics vs. Gate Resistance
100
td(on)
tr
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25 C
TC = 125 C
10
0 10 20 30 40 50 60 70
Gate Resistance RG (Ω)
Fig 9. Switching Loss vs. Gate Resistance
10
Eon
1 Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25 C
0.1 TC = 125 C
0 10 20 30 40 50 60 70
Gate Resistance RG (Ω)
Fig 11. Turn-Off Characteristics vs. Collector Current
1000
td(off)
100
10
0
tf
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
10 20 30 40 50
Collector Current IC (Α)
Fig 8. Turn-Off Characteristics vs. Gate Resistance
1000
td(off)
100
10
0
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25 C
TC = 125 C
10 20 30 40 50 60 70
Gate Resistance RG (Ω)
Fig 10. Turn-On Characteristics vs. Collector Current
100
td(on)
tr
10
0
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
20 30 40 50
Collector Current IC (Α)
Fig 12. Switching Loss vs. Collector Current
10.0
Eon
1.0
0.1
0
Eoff
10 20
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
30 40 50
Collector Current IC (Α)
2009. 10. 29
Revision No : 0
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet KGT25N120NDA.PDF ] | |
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