KGT40N60KDA 반도체 회로 부품 판매점
NPT Trench IGBT
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
KGT40N60KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
High speed switching
High system efficiency
Short Circuit Withstand Times 10us
Extremely enhanced avalanche capability
AB
O SK
D
E
F
PP
123
DIM MILLIMETERS
A 15.90 +_ 0.30
B 5.00 +_ 0.20
C 20.85 +_ 0.30
D 3.00 +_ 0.20
E 2.00 +_ 0.20
F 1.20 +_ 0.20
MG
H
I
Max. 4.50
20.10 +_ 0.70
0.60 +_ 0.02
I J 14.70 +_ 0.20
K 2.00 +_ 0.10
M 2.40 +_ 0.20
O 3.60 +_ 0.30
P 5.45 +_ 0.30
Q 3.60 +_ 0.20
R 7.19 +_ 0.10
1. GATE
2. COLLECTOR
3. EMITTER
S
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
600 V
20 V
Collector Current
@Tc=25
@Tc=100
80 A
IC
40 A
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100
Diode Maximum Forward Current
ICM* 120 A
IF 40 A
IFM 80 A
Maximum Power Dissipation
@Tc=25
@Tc=100
290 W
PD
116 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.43
1.45
40
UNIT
/W
/W
/W
TO-247
C
G
E
E
C
G
2011. 8. 30
Revision No : 0
1/7
KGT40N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
BVCES
ICES
IGES
VGE(th)
VCE(sat)
VGE=0V , IC=250
VGE=0V, VCE=600V
VCE=0V, VGE= 20V
VGE=VCE, IC=250
VGE=15V, IC=40A
VGE=15V, IC=40A, TC = 125
VGE=15V, IC=80A, TC = 25
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Short Circuit Withstand Time
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
tsc
VCC=400V, VGE=15V, IC= 40A
VCC=300V, IC=40A, VGE=15V,RG=10
Inductive Load, TC = 25
VCC=300V, IC=40A, VGE=15V, RG=10
Inductive Load, TC = 125
VCE=30V, VGE=0V, f=1MHz
VCC=300V, VGE=15V, TC=100
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
MIN. TYP. MAX. UNIT
600 -
-V
- - 250
- - 100 nA
4.5 5.5 7.0
V
-
1.80 2.20
V
- 2.10 -
V
- 2.45 -
V
- 170
- 25
- 80
- 50
- 40
- 170
- 35
- 0.6
- 0.4
- 1.0
- 55
- 50
- 185
- 75
- 1.2
- 1.0
- 2.2
- 3200
- 200
- 100
10 -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
pF
pF
pF
s
KGT
40N60KDA
025
1 Device Mark 1
2 Device Mark 2
3 Lot No
2011. 8. 30
Revision No : 0
2/7
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PDF 파일 내의 페이지 : 총 7 페이지
제조업체: KEC
( kec )
KGT40N60KDA igbt
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[ KGT40N60KDA.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
