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PDF NGB8204AN Data sheet ( Hoja de datos )
| Número de pieza | NGB8204AN | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NGB8204N, NGB8204AN
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (RGE)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
430 VDC
430 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 W
0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
1 STYLE 4
MARKING DIAGRAM
4
Collector
GB
8204xG
AYWW
13
Gate
2
Emitter
Collector
GB8204x
A
Y
WW
G
= Device Code
x = N or A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8204NT4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NGB8204ANT4G D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 4
1
Publication Order Number:
NGB8204N/D
1 page  
NGB8204N, NGB8204AN
3 10000
2.5 IC = 15 A
2 IC = 10 A
1.5
IC = 5 A
1
TJ = 150°C
0.5
0
3 4 5 6 7 8 9 10
GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
1000
Ciss
100 Coss
10 Crss
1
0
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Capacitance Variation
2
1.8
1.6
VTH + 4 s
VTH
1.4 VTH − 4 s
1.2
1
0.8
0.6
0.4
0.2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
30
VCC = 50 V
25 VGE = 5.0 V
RG = 1000 W
20 L = 2 mH
15
L = 3 mH
10 L = 6 mH
5
0
−50 −25 0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
30
VCC = 50 V
25 VGE = 5.0 V
L = 2 mH
RG = 1000 W
20 L = 3 mH
15 L = 6 mH
10
5
0
−50 −25
0
25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
12
10
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
8 IC = 10 A
L = 300 mH
6
4
tf
td(off)
2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time
versus Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NGB8204AN.PDF ] | |
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