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PDF NGB8202NT4G Data sheet ( Hoja de datos )
| Número de pieza | NGB8202NT4G | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NGB8202N, NGB8202AN
Ignition IGBT
20 A, 400 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
VCES
VCER
VGE
IC
IG
IG
ESD
440
440
"15
20
50
1.0
20
2.0
V
V
V
ADC
AAC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 W
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 7
1
http://onsemi.com
20 AMPS, 400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1
MARKING DIAGRAM
4
Collector
GB
8202xxG
AYWW
13
Gate
2
Emitter
Collector
GB8202xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGB8202NT4G
Package
D2PAK
(Pb−Free)
Shipping†
800/Tape & Reel
NGB8202ANT4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8202N/D
1 page  
NGB8202N, NGB8202AN
TYPICAL ELECTRICAL CHARACTERISTICS
400
350 TJ = 25°C
300
250 TJ = 175°C
200
150
100
50
0
0
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
2468
INDUCTOR (mH)
10
Figure 1. Self Clamped Inductive Switching
2.0
1.75
1.5
1.25
1.0
0.75
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 7.5 A
0.5
0.25 VGE = 4.5 V
0.0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
60
VGE = 10 V
50
5V
40
TJ = 25°C
30
4.5 V
4V
3.5 V
20 3 V
10
2.5 V
0
012345678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
30
VCC = 14 V
25 VGE = 5.0 V
RG = 1000 W
20 L = 1.8 mH
15 L = 3.0 mH
10 L = 10 mH
5
0
−50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Open Secondary Avalanche Current
vs. Temperature
60
VGE = 10 V
50 5 V
40 TJ = 175°C
30
4.5 V
4V
3.5 V
3V
20
10 2.5 V
0
012 34 5678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
VGE = 10 V
50
5V
40
TJ = −40°C
30
4.5 V
4V
3.5 V
20
3V
10
2.5 V
0
01 2 3 456 78
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NGB8202NT4G.PDF ] | |
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