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NGB8202AN 반도체 회로 부품 판매점

Ignition IGBT



ON Semiconductor 로고
ON Semiconductor
NGB8202AN 데이터시트, 핀배열, 회로
NGB8202N, NGB8202AN
Ignition IGBT
20 A, 400 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
Continuous Gate Current
Transient Gate Current (t2 ms, f100 Hz)
ESD (ChargedDevice Model)
VCES
VCER
VGE
IC
IG
IG
ESD
440
440
"15
20
50
1.0
20
2.0
V
V
V
ADC
AAC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 W
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg 55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 7
1
http://onsemi.com
20 AMPS, 400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1
MARKING DIAGRAM
4
Collector
GB
8202xxG
AYWW
13
Gate
2
Emitter
Collector
GB8202xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGB8202NT4G
Package
D2PAK
(PbFree)
Shipping
800/Tape & Reel
NGB8202ANT4G D2PAK 800/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8202N/D


NGB8202AN 데이터시트, 핀배열, 회로
NGB8202N, NGB8202AN
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° ≤ TJ 175°C)
Characteristic
Symbol
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient (Note 1)
Maximum Temperature for Soldering Purposes, 1/8from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
RqJC
RqJA
TL
Value
250
200
180
2000
1.0
62.5
275
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current
ICES
Reverse CollectorEmitter Clamp
Voltage
BVCES(R)
Reverse CollectorEmitter Leakage
Current
ICES(R)
Test Conditions
IC = 2.0 mA
IC = 10 mA
VGE = 0 V,
VCE = 15 V
VCE = 200 V,
VGE = 0 V
IC = 75 mA
VCE = 24 V
NGB8202N
VCE = 24 V
NGB8202AN
GateEmitter Clamp Voltage
GateEmitter Leakage Current
Gate Resistor
GateEmitter Resistor
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
VGE(th)
IG = "5.0 mA
VGE = "5.0 V
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ Max
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 25°C
370
390
395
415
0.1
420
440
1.0
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
0.5
1.0
0.4
30
35
30
0.05
1.0
0.005
0.05
1.0
0.005
12
200
14.25
1.5
25
0.8
35
39
33
0.1
5.0
0.01
0.2
8.5
0.025
12.5
300
70
16
10
100*
5.0
39
45*
37
0.5
10
0.1
1.0
25
0.2
14
350*
25
TJ = 25°C
TJ = 175°C
TJ = 40°C
1.5 1.8
2.1
0.7 1.0
1.3
1.7 2.0 2.3*
4.0 4.6
5.2
Unit
mJ
mJ
°C/W
°C/W
°C
Unit
V
mA
mA
V
mA
V
mA
W
kW
V
mV/°C
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NGB8202AN igbt

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