NGD8201B 반도체 회로 부품 판매점
Ignition IGBT
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 ON Semiconductor |
NGD8201B
Ignition IGBT, 20 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
VCES
VCER
VGE
IC
ESD
430 VDC
430 VDC
18 VDC
15 ADC
50 AAC
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
20 AMPS, 400 VOLTS
VCE(on) 3 1.8 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
AYWW
NGD
8201BG
4
Collector
3
Emitter
NGD8201B = Device Code
A = Assemlby Location
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201BNT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
Publication Order Number:
NGD8201B/D
NGD8201B
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 22 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 17 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 19 A, L = 1.8 mH, Starting TJ = 125°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
THERMAL CHARACTERISTICS
EAS
EAS(R)
435
433
325
2000
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
1. When surface mounted to an FR4 board using the minimum recommended pad size.
RθJC
RθJA
TL
1.3
95
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
IC = 2.0 mA
TJ = −40°C to 380 395 420
150°C
VDC
IC = 10 mA
TJ = −40°C to 390 405 430
150°C
Zero Gate Voltage Collector Current
ICES
Reverse Collector−Emitter Leakage Current
IECS
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
Gate−Emitter Clamp Voltage
BVGES
VCE = 350 V,
VGE = 0 V
VCE = 15 V,
VGE = 0 V
VCE = −24 V
IC = −75 mA
IG = 5.0 mA
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = 25°C
− 1.5 5 mADC
− 10 30*
− 0.5 2.5
− − 2.0
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = 25°C
TJ = 150°C
TJ = −40°C
TJ = −40°C to
150°C
−
−
−
27
30
25
11
0.7 1.0
12 25*
0.1 1.0
33 37
36 40
32 35
13 15
mA
VDC
VDC
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to 384 640 700 mADC
150°C
Gate Resistor
RG
−
TJ = −40°C to − 70 −
150°C
Ω
Gate Emitter Resistor (Note 3)
RGE
−
TJ = −40°C to 10 16 26
150°C
kΩ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
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NGD8201B igbt
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