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PDF 2MBI1200U4G-170 Data sheet ( Hoja de datos )
| Número de pieza | 2MBI1200U4G-170 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2MBI1200U4G-170
IGBT MODULE (U series)
1700V / 1200A / 2 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
6250
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Symbols Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Rgon = 4.7Ω, Rgoff = 1.2Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 1200A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 1600
5.5 6.5 7.5
- 2.57 2.76
- 2.97 -
- 2.25 2.40
- 2.65 -
- 112 -
- 3.10 -
- 1.25 -
- 1.45 -
- 0.25 -
- 2.12 2.51
- 2.32 -
- 1.80 2.15
- 2.00 -
- 0.45 -
- 0.27 -
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min. typ. max.
- - 0.020
- - 0.033
- 0.006 -
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1 page  
2MBI1200U4G-170
Outline Drawings, mm
IGBT Modules
Equivalent Circuit Schematic
sense emitter E1
main emitter
E1
main collector
C2
C2 sense collector
gate G1
G2 gate
sense collector C1
C1
main collector
E2
main emitter
E2 sense emitter
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2MBI1200U4G-170.PDF ] | |
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