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ON Semiconductor |
NGTB30N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector
limited by TJmax
current,
Tpulse
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
600
60
30
150
60
30
150
$20
250
50
−55 to +150
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.8 V
Eoff = 0.28 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Publication Order Number:
NGTB30N60IHLW/D
NGTB30N60IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.87
1.46
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
Collector−emitter saturation voltage
VGE = 15 V, IC = 30 A
VCEsat − 1.8 2.3 V
VGE = 15 V, IC = 30 A, TJ = 150°C
− 2.2 −
Gate−emitter threshold voltage
VGE = VCE, IC = 250 mA
VGE(th) 4.5 5.5 6.5
V
Collector−emitter cut−off current, gate−
VGE = 0 V, VCE = 600 V
ICES − − 0.2 mA
emitter short−circuited
VGE = 0 V, VCE = 600 V, TJ = 150°C
−−2
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
− 3100 −
− 120 −
− 80 −
130
27
65
pF
nC
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−off switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−off switching loss
DIODE CHARACTERISTIC
VCC
=
T4J00=
25°C
V, IC =
30
A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
70 ns
30
140
80
0.28 mJ
70 ns
32
150
100
0.55 mJ
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
VF
trr
Qrr
Irrm
1.2
1.2
400
4500
23
1.4
V
ns
nc
A
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