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NGTB30N60IHLWG 반도체 회로 부품 판매점

IGBT



ON Semiconductor 로고
ON Semiconductor
NGTB30N60IHLWG 데이터시트, 핀배열, 회로
NGTB30N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast copackaged free wheeling diode with a low
forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are PbFree Devices
Typical Applications
Inductive Heating
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector
limited by TJmax
current,
Tpulse
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
600
60
30
150
60
30
150
$20
250
50
55 to +150
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.8 V
Eoff = 0.28 mJ
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB30N60IHLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 0
1
Publication Order Number:
NGTB30N60IHLW/D


NGTB30N60IHLWG 데이터시트, 핀배열, 회로
NGTB30N60IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.87
1.46
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
V(BR)CES
600
V
Collectoremitter saturation voltage
VGE = 15 V, IC = 30 A
VCEsat 1.8 2.3 V
VGE = 15 V, IC = 30 A, TJ = 150°C
2.2
Gateemitter threshold voltage
VGE = VCE, IC = 250 mA
VGE(th) 4.5 5.5 6.5
V
Collectoremitter cutoff current, gate
VGE = 0 V, VCE = 600 V
ICES − − 0.2 mA
emitter shortcircuited
VGE = 0 V, VCE = 600 V, TJ = 150°C
−−2
Gate leakage current, collectoremitter
shortcircuited
VGE = 20 V , VCE = 0 V
IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
3100
120
80
130
27
65
pF
nC
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnoff switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnoff switching loss
DIODE CHARACTERISTIC
VCC
=
T4J00=
25°C
V, IC =
30
A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
70 ns
30
140
80
0.28 mJ
70 ns
32
150
100
0.55 mJ
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
VF
trr
Qrr
Irrm
1.2
1.2
400
4500
23
1.4
V
ns
nc
A
http://onsemi.com
2




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