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PDF NGTB30N60FWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB30N60FWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
60
30
IFM 120 A
tSC 5 ms
VGE
$20
V
$30
PD W
167
67
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.45 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60FWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
Publication Order Number:
NGTB30N60FW/D
1 page  
NGTB30N60FWG
TYPICAL CHARACTERISTICS
70 20
60
50
TJ = 25°C
15
40 TJ = 150°C
10
30
VCE = 480 V
20 5
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
0
0 25 50 75 100 125 150 175 200
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.2
VCE = 400 V
1
VGE = 15 V
IC = 30 A
Rg = 10 W
0.8
0.6
Eoff
Eon
1000
100
td(off)
tf
tr
td(on)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
10
VCE = 400 V
VGE = 15 V
IC = 30 A
1 Rg = 10 W
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
2.1
VCE = 400 V
1.8 VGE = 15 V
TJ = 150°C
1.5 Rg = 10 W
1.2
0.9
Eoff
Eon
0.6
0.3
0 8 16 24 32 40 48 56
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
tf
td(off)
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
64 8 16 24 32 40 48 56
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
64
http://onsemi.com
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