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PDF GA200TD120U Data sheet ( Hoja de datos )
| Número de pieza | GA200TD120U | |
| Descripción | HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PRELIMINARY
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 5.061B
GA200TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.3V
@VGE = 15V, IC = 200A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
200
400
400
400
±20
2500
1040
540
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.12
0.20
—
4.0
3.0
—
Units
°C/W
N.m
g
1
3/20/98
1 page  
70000
60000
50000
40000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
30000
20000
10000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA200TD120U
20
VCC = 400V
I C = 24090AA
16
12
8
4
0
0
400
800
1200
1600
2000
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
140
VCC = 720V
VGE = 15V
130
TJ
IC
= 125 °C
= 200A
120
110
100
90
80
0
10 20 30 40 50
RG , Gate Resistance (O( hΩm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1000 RG1=1=5OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 720V
100
IC = 400 A
IC = 200 A
IC = 100 A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GA200TD120U.PDF ] | |
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