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International Rectifier |
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50053B
GA125TS120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.2V
@VGE = 15V, IC = 125A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current ➀
Peak Switching Current ➁
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
125
250
250
250
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
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Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂
Weight of Module
Typ.
—
—
0.1
—
—
200
Max.
0.20
0.35
—
4.0
3.0
—
Units
°C/W
N.m
g
1
4/24/2000
GA125TS120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 1200
Collector-to-Emitter Voltage
—
—
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage —
Forward Transconductance ➃
—
Collector-to-Emitter Leaking Current
—
—
Diode Forward Voltage - Maximum
—
—
Gate-to-Emitter Leakage Current
—
—
2.2
2.1
—
-11
170
—
—
2.7
2.6
—
— VGE = 0V, IC = 1mA
3.0 VGE = 15V, IC = 125A
— V VGE = 15V, IC = 125A, TJ = 125°C
6.0 VCE = 6.0V, IC = 1.5mA
— mV/°C VCE = 6.0V, IC = 1.5mA
— S VCE = 25V, IC = 125A
1.0 mA VGE = 0V, VCE = 1200V
10 VGE = 0V, VCE = 1200V, TJ = 125°C
4.2 V IF = 125A, VGE = 0V
— IF = 125A, VGE = 0V, TJ = 125°C
250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 989 1484
VCC = 400V
— 167 250 nC IC = 148A
— 328 492
— 186 —
TJ = 25°C
RG1 = 15Ω, RG2 = 0Ω,
— 159 — ns IC = 125A
— 459 —
VCC = 720V
— 404 —
VGE = ±15V
— 19 — mJ Inductor load
— 31 —
— 49 75
— 22258 —
VGE = 0V
— 989 — pF VCC = 30V
— 192 —
ƒ = 1 MHz
— 181 —
— 126 —
— 11360 —
ns IC = 125A
A RG1 = 15Ω
nC RG2 = 0Ω
— 1875 — A/µs VCC = 720V
di/dt =1448A/µs
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