GB3NB60KD 반도체 회로 부품 판매점
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
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 STMicroelectronics |
STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
(Typ) @125°C @125°C
STGP3NB60K
STGD3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
600 V
600 V
600 V
600 V
600 V
<2V
<2V
<2V
<2V
<2V
3A
3A
3A
3A
3A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s HIGH FREQUENCY OPERATION
s SHORT CIRCUIT RATED
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
Std. Version
“D” Version
ORDERING INFORMATION
SALES TYPE
MARKING
STGP3NB60K
GP3NB60K
STGD3NB60KT4
GD3NB60K
STGP3NB60KD
GP3NB60KD
STGP3NB60KDFP
GP3NB60KDFP
STGB3NB60KDT4
GB3NB60KD
May 2002
PACKAGE
TO-220
DPAK
TO-220
TO-220FP
D2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
TAPE & REEL
1/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Voltage (VGS = 0)
VECR Emitter-Collector Voltage
VGE Gate-Emitter Voltage
IC Collector Current (continuos) at TC = 25°C
IC Collector Current (continuos) at TC = 100°C
ICM (n) Collector Current (pulsed)
If (1) Forward Current
Ifm (1) Forward Current Pulsed
PTOT Total Dissipation at TC = 25°C
Derating Factor
VISO Insulation Withstand Voltage A.C.
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(n) Pulse width limited by safe operating area
(1) For “D” version only
TO-220
D2PAK
6
3
24
68
--
Value
TO-220FP
600
20
±20
6
3
24
3
24
25
0.75
2500
– 55 to 150
150
DPAK
6
3
24
60
--
Unit
V
V
V
A
A
A
A
A
W
W/°C
V
°C
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220
D2PAK
TO-220FP
1.8 5
62.5
0.5
DPAK
2.1
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
500
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250µA
5
7
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
2.3 2.8
1.9
Unit
V
µA
µA
nA
V
V
V
2/14
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제조업체: STMicroelectronics
( stm )
GB3NB60KD igbt
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상호 : 아이지 인터내셔날
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[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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