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PDF K20T60 Data sheet ( Hoja de datos )
| Número de pieza | K20T60 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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 1. - IKW20N60T, 600V, 20A, IGBT  Hay una vista previa y un enlace de descarga de K20T60 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
P-TO-220-3-1
(TO-220AB)
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-247-3-1
(TO-220AC)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IKP20N60T 600V 20A
1.5V
175°C
K20T60
IKB20N60T 600V 20A
1.5V
175°C
K20T60
IKW20N60T 600V 20A
1.5V
175°C
K20T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-220 Q67040S4715
TO-263 Q67040S4713
TO-247 Q67040S4716
Value
600
40
20
60
60
40
20
60
±20
5
166
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Dec-04
1 page  
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
60A
50A
40A
30A
TC=80°C
TC=110°C
20A
10A
0A
10Hz
Ic
Ic
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 12Ω)
tp=2µs
10µs
10A
50µs
1A
1ms
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
160W
140W
120W
100W
80W
60W
40W
20W
0W25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
30A
25A
20A
15A
10A
5A
0A
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
5
Rev. 2.2 Dec-04
5 Page 
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
TJ=175°C
24A
20A
16A
TJ=25°C
12A
8A
4A
0A
600A/µs
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)
-750A/µs
TJ=25°C
-600A/µs
-450A/µs
-300A/µs
TJ=175°C
-150A/µs
0A/µs
600A/µs
900A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
50A
40A
TJ=25°C
175°C
30A
20A
10A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2.0V
IF=40A
1.5V
1.0V
20A
10A
0.5V
0 .0 V0 ° C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Power Semiconductors
11
Rev. 2.2 Dec-04
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet K20T60.PDF ] | |
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