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Infineon Technologies |
IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ75N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
IGZ75N65H5
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IGZ75N65H5
650V 75A
1.65V
Tvjmax
175°C
Marking
G75EH5
Package
PG-TO247-4
2 Rev.2.1,2014-10-31
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