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PDF H40T120 Data sheet ( Hoja de datos )
| Número de pieza | H40T120 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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Soft Switching Series
IHW40T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Very soft, fast recovery anti-parallel EmCon™ HE diode
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW40T120 1200V 40A
1.8V
150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Marking
H40T120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO247-3
Value
1200
75
40
105
105
31
19.8
47
78
200
160
±20
10
270
-40...+150
-55...+150
Unit
V
A
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 08
1 page  
Soft Switching Series
IHW40T120
100A
80A
60A
TC=80°C
TC=110°C
40A
Ic
20A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
100A
10A
1A
tp=3µs
10µs
50µs
150µs
500µs
20ms
DC
0,1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
250W
200W
150W
100W
50W
0W
25°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
70A
60A
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2.3 Sep 08
5 Page 
Soft Switching Series
IHW40T120
TJ=150°C
30A
25A
20A TJ=25°C
15A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
-300A/µs
-200A/µs
TJ=25°C
TJ=150°C
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
40A TJ=25°C
150°C
30A
20A
10A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2,0V
IF=30A
1,5V
1,0V
15A
8A
5A
0,5V
0,0V
-50°C
0°C
50°C 100°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Power Semiconductors
11
Rev. 2.3 Sep 08
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet H40T120.PDF ] | |
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