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PDF STGW20V60DF Data sheet ( Hoja de datos )
| Número de pieza | STGW20V60DF | |
| Descripción | 600V 20A very high speed trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
http://www.Datasheet4U.com
1 page  
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Symbol
Table 6. IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
td(off) Turn-off delay time
tf
(1)
Eon
(2)
Eoff
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 400 V, IC = 20 A,
VGE = 15 V,
see Figure 28
Ets Total switching losses
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
td(off) Turn-off delay time
tf
(1)
Eon
(2)
Eoff
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 400 V, IC = 20 A,
di/dt = 1000 A/μs,
VGE = 15 V,
TJ = 175 °C, see Figure 28
Ets Total switching losses
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
- 38 - ns
- 10 - ns
- 1556 - A/μs
- 149 - ns
- 15 - ns
- 200 - μJ
- 130 - μJ
- 330 - μJ
- 37 - ns
- 12 - ns
- 1340 - A/μs
- 150 - ns
- 23 - ns
- 430 - μJ
- 210 - μJ
- 640 - μJ
Symbol
Table 7. Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time
- 40 - ns
Qrr
Irrm
dIrr/ /dt
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
IF = 20 A, VR = 400 V,
VGE = 15 V, see Figure 28
di/dt = 1000 A/μs
- 320 - nC
- 16 - A
- 910 - A/μs
Err Reverse recovery energy
- 115 - μJ
trr Reverse recovery time
- 72 - ns
Qrr
Reverse recovery charge
IF = 20 A, VR = 400 V,
- 930 - nC
Irrm Reverse recovery current VGE = 15 V,
- 26 - A
TJ = 175 °C, see Figure 28
Peak rate of fall of reverse
dIrr/ /dt recovery current during tb di/dt = 1000 A/μs
- 530 - A/μs
Err Reverse recovery energy
- 307 - μJ
DocID024360 Rev 3
5/23
http://www.Datasheet4U.com
5 Page 
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
3 Test circuits
Test circuits
Figure 28. Test circuit for inductive load
switching
Figure 29. Gate charge test circuit
AM01504v1
Figure 30. Switching waveform
AM01505v1
Figure 31. Diode recovery time waveform
VCE
VG
IC
Td(on)
Tr(Ion)
Ton
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
di/dt
IF
IRRM
AM01506v1
trr
ta
tb
Qrr
IRRM
t
dv/dt
VF
AM01507v1
DocID024360 Rev 3
11/23
http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet STGW20V60DF.PDF ] | |
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