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International Rectifier |
PD - 96168
IRG4PC50F-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AD package
Lead-Free
C
G
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AD
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
1
08/06/08
http://www.Datasheet4U.com
IRG4PC50F-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
18
0.62
1.45
1.6
V
V/°C
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 39A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.79 V IC = 70A
See Fig.2, 5
1.53
IC = 39A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -14 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
21 30 S VCE = 100V, IC = 39A
ICES
Zero Gate Voltage Collector Current
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
190 290
IC = 39A
28 42
65 97
nC VCC = 400V
VGE = 15V
See Fig. 8
31
25 ns TJ = 25°C
240 350
IC = 39A, VCC = 480V
130 190
VGE = 15V, RG = 5.0Ω
0.37
Energy losses include "tail"
2.1 mJ See Fig. 10, 11, 13, 14
2.47 3.0
28
TJ = 150°C,
24
390
ns IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0Ω
230
Energy losses include "tail"
5.0 mJ See Fig. 13, 14
13 nH Measured 5mm from package
4100
VGE = 0V
250
49
pF VCC = 30V
= 1.0MHz
See Fig. 7
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
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http://www.Datasheet4U.com
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