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PDF IGW25N120H3 Data sheet ( Hoja de datos )
| Número de pieza | IGW25N120H3 | |
| Descripción | High speed IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IGW25N120H3 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
recommendedincombinationwithSiCDiodeIDH15S120
IGW25N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
Free Datasheet http://www.nDatasheet.com
1 page  
IGW25N120H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=960V,IC=25.0A,
VGE=15V
VGE=15.0V,VCC≤600V,
tSC≤10µs
Tvj=175°C
min.
Value
typ.
max. Unit
- 1430 -
- 95 - pF
- 75 -
- 115.0 - nC
- -A
87
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
Tvj=25°C,
VCC=600V,IC=25.0A,
VGE=0.0/15.0V,
rG=23.0Ω,Lσ=80nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW25N120H3) reverse
recovery.
Tvj=25°C,
VCC=800V,IC=10.0A,
VGE=0.0/15.0V,
rG=3.0Ω,Lσ=80nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.
min.
Value
typ.
max. Unit
- 27 - ns
- 41 - ns
- 277 - ns
- 17 - ns
- 1.80 - mJ
- 0.85 - mJ
- 2.65 - mJ
- 0.08 - mJ
- 0.27 - mJ
- 0.35 - mJ
5 Rev.2.1,2014-02-27
Free Datasheet http://www.nDatasheet.com
5 Page 
IGW25N120H3
Highspeedswitchingseriesthirdgeneration
2.0
Eoff
1.8
Eon
Ets
1.6
1.2
Eoff
Eon
Ets
1.0
1.4
0.8
1.2
1.0 0.6
0.8
0.4
0.6
0.4
0.2
0.2
0.0
0
5 10 15 20
IC,COLLECTORCURRENT[A]
25
0.0
0
5 10 15 20
rG,GATERESISTOR[Ω]
25
Figure 1. Typicalswitchingenergylossesasafunction Figure 2. Typicalswitchingenergylossesasafunction
ofcollectorcurrent
ofgateresistor
(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,
(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,
rG=3Ω,DiodeIDH15S120)
IC=10A,DiodeIDH15S120)
0.8
Eoff
Eon
Ets
0.8
Eoff
Eon
0.7 Ets
0.6 0.6
0.5
0.4 0.4
0.3
0.2 0.2
0.1
0.0 0.0
25 50 75 100 125 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C]
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicalswitchingenergylossesasafunction Figure 4. Typicalswitchingenergylossesasafunction
ofjunctiontemperature
ofcollectoremittervoltage
(indload,VCE=800V,VGE=15/0V,IC=10A,
(ind.load,Tj=125°C,VGE=15/0V,IC=10A,
rG=3Ω,DiodeIDH15S120)
rG=3Ω,DiodeIDH15S120)
10a Rev.2.1,2014-02-27
Free Datasheet http://www.nDatasheet.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IGW25N120H3.PDF ] | |
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