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FGA20S120M 반도체 회로 부품 판매점

20A Shorted-Anode IGBT



Fairchild Semiconductor 로고
Fairchild Semiconductor
FGA20S120M 데이터시트, 핀배열, 회로
March 2010
FGA20S120M
1200V, 20A Shorted-Anode IGBT
tm
Features
• High speed switching
• Low saturation voltage: VCE(sat) =1.55V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave Oven
• Soft switching Application
General Description
Using advanced Field Stop Trench and shorted-anode technol-
ogy, Fairchild’s 1200V Shorted-Anode Trench IGBTs offer supe-
rior conduction and switching performances, and easy parallel
operation with exceptional avalanche capability. This device is
designed for Induction heating Microvewave Oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
©2010 Fairchild Semiconductor Corporation
FGA20S120M Rev. A
1
G
E
Ratings
1200
±25
40
20
60
40
20
348
174
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.43
0.43
40
Units
V
V
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/


FGA20S120M 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGA20S120M
FGA20S120M
TO-3PN
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 2mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 125oC
IC = 20A, VGE = 15V,
TC = 175oC
IF = 20A, TC = 25oC
IF = 20A, TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characcteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 20A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 20A,
RG = 10, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 20A,
VGE = 15V
1200
-
-
V
- - 1 mA
-
-
±250
nA
4.5 6.0 7.5
- 1.55 1.85
- 1.75 -
- 1.85 -
-- 1.7 2.2
-- 2.1 -
V
V
V
V
V
V
-- 2680 --
-- 53 --
-- 43 --
pF
pF
pF
- 43 - ns
- 176 -
ns
- 310 -
ns
-
320 480
ns
- 0.52 -
mJ
-
1.43 2.145
mJ
- 1.95 -
mJ
- 41 - ns
- 260 -
ns
- 345 -
ns
- 520 -
ns
- 0.78 -
mJ
- 1.97 -
mJ
- 2.75 -
mJ
- 210 -
nC
- 18 - nC
- 119 -
nC
FGA20S120M Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/




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20A Shorted-Anode IGBT - Fairchild Semiconductor