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Infineon |
TrenchStop®Series
IGP30N60T
IGW30N60T
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterruptible Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
PG-TO-220-3-1
- high ruggedness, temperature stable behavior
- very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
Package
IGP30N60T 600V 30A
1.5V
175°C
G30T60 PG-TO-220-3-1
IGW30N60T 600V 30A
1.5V
175°C
G30T60 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
600
60
30
90
90
±20
5
187
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop®Series
IGP30N60T
IGW30N60T
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
0.80
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=0.2mA
VGE = 15V, IC=30A
Tj=25°C
Tj=175°C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.9
4.9
-
-
-
16.7
-
max. Unit
-V
2.05
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=30A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC≤5µs
VCC = 400V,
Tj = 150°C
-
-
-
-
-
-
-
1630
108
50
167
7
13
275
- pF
-
-
- nC
- nH
-
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/
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