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IGBT



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ON Semiconductor
NGTB20N120IHLWG 데이터시트, 핀배열, 회로
NGTB20N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
40
20
V
Ahttp://www.DataSheet4U.net/
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
40
20
Diode pulsed
by TJmax
current,
Tpulse
limited
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1200 V
VCEsat = 1.80 V
Eoff = 0.7 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
20N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB20N120IHLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1
Publication Order Number:
NGTB20N120IHL/D
datasheet pdf - http://www.DataSheet4U.net/


NGTB20N120IHLWG 데이터시트, 핀배열, 회로
NGTB20N120IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.65
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 20 A, VGE = 15 V
http://www.DataSheet4U.net/
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnoff delay time
Fall time
Turnoff switching loss
Turnoff delay time
Fall time
Turnoff switching loss
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
4.5
Typ
1.80
2.0
5.5
4700
155
100
200
36
98
235
180
0.7
235
250
1.60
1.55
1.65
Max
2.2
6.5
0.5
2.0
100
1.75
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
2
datasheet pdf - http://www.DataSheet4U.net/




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