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ON Semiconductor |
NGTB15N60EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged co−packaged
reverse recovery diode with a low forward voltage.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• Soft Fast Reverse Recovery Diode
• 10 ms Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• This is a Pb−Free Device
Typical Applications
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse limited by
TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited by
TJmax
Gate−emitter voltage
Power dissipation
@ TC = 25°C
@ TC = 100°C
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
Operating junction temperature range
VCES
IC
ICM
IF
IFM
VGE
PD
tSC
TJ
600
30
15
120
30
15
120
$20
117
47
10
−55 to
+150
Vhttp://www.DataSheet4U.net/
A
A
A
A
V
W
ms
°C
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
TSLD
260
°C
case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 600 V
VCEsat = 1.7 V
C
G
E
C
G CE
TO−220
CASE 221A
STYLE 4
MARKING DIAGRAM
15N60G
AYWW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB15N60EG
TO−220 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 6
1
Publication Order Number:
NGTB15N60E/D
datasheet pdf - http://www.DataSheet4U.net/
NGTB15N60EG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
Symbol
RqJC
RqJC
RqJA
Value
1.06
3.76
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
Forward Transconductance
DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 Vhttp://www.DataSheet4U.net/
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 150°C
VCC = R40g0=V2,2ICW= 15 A
VGE = 0 V / 15 V
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
VGE
=V0GVE,
=IF0=V1,5IFA=,
15 A
TJ = 150°C
Symbol Min Typ Max Unit
V(BR)CES 600
−
−
VCEsat
1.45
1.8
1.7
2.1
1.95
2.4
VGE(th) 4.5 5.5 6.5
ICES
−
−
10 −
− 200
IGES − − 100
gfs − 10.1 −
V
V
V
mA
nA
S
Cies
Coes
Cres
Qg
Qge
Qgc
− 2600 −
− 64 −
− 42 −
− 80 −
− 24 −
− 33 −
pF
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
− 78 −
− 30 −
− 130 −
− 120 −
− 0.900 −
− 0.300 −
− 1.200 −
− 76 −
− 33 −
− 133 −
− 223 −
− 1.10 −
− 0.510 −
− 1.610 −
ns
mJ
ns
mJ
VF
− 1.6 1.85 V
− 1.6 −
http://onsemi.com
2
datasheet pdf - http://www.DataSheet4U.net/
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