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Preliminary Datasheet
RJP1CS04DWT/RJP1CS04DWA
1250V - 50A - IGBT
Application: Inverter
R07DS0827EJ0004
Rev.0.04
Jun 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS04DWT-80
3
1
3
Wafer: RJP1CS04DWA-80
2
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Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
1250
±30
100
50
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0827EJ0004 Rev.0.04
Jun 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP1CS04DWT/RJP1CS04DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in evaluation package.)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
4Output capacitance
Reveres transfer capacitance
Switching time
Short circuit withstand time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
tsc
Min
—
—
5.0
—
—
—
—
—
—
—
—
10
Typ
—
—
—
1.8
5.3
0.16
0.12
30
30
300
130
—
Notes: 2. Pulse test.
3. Switching time test circuit and waveform are shown below.
Max
1
±1
6.8
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
nF
nF
nF
ns
ns
ns
ns
s
(Ta = 25°C)
Test Conditions
VCE = 1250 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1.7 mA
IC = 50 A, VGE = 15 V Note2
VCE = 25 V
VGE = 0
f = 1 MHz
VCC = 600 V Note3
IC = 50 A
VGE =±15 V
Rg = 10 , Tj = 125 C
Inductive load
VCC 720 V , VGE = 15 V
Tj = 150 C
Switching Time Test Circuit
Waveform
Diode clamp
Rg
L
D.U.T
VGE
90%
VCC
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IC
90%
10%
90%
10%
td(off)
tf
10%
td(on) tr
R07DS0827EJ0004 Rev.0.04
Jun 05, 2012
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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