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Preliminary Datasheet
RJP65S07DWT/RJP65S07DWA
650V - 150A - IGBT
Application: Inverter
R07DS0824EJ0001
Rev.0.01
Jul 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S07DWT-80
32
3
1
3
3
www.DataSheet.net/
Wafer: RJP65S07DWA-80
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation Package.
Ratings
650
±30
300
150
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0824EJ0001 Rev.0.01
Jul 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP65S07DWT/RJP65S07DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in evaluation package.)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Switching time
Short circuit withstand time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
tsc
Min
—
—
5.0
—
—
—
—
—
—
—
—
10
Typ Max
—1
— ±1
— 6.8
1.60 —
12.5 —
0.5 —
0.4 —
90 —
100 —
400 —
80 —
——
Notes: 2. Pulse test.
3. Switching time test circuit and waveform are shown below.
Unit
A
A
V
V
nF
nF
nF
ns
ns
ns
ns
s
(Ta = 25°C)
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 4 mA
IC = 150 A, VGE = 15 V Note2
VCE = 25 V
VGE = 0
f = 1 MHz
VCC = 300 V Note3
IC = 150 A
VGE =±15 V
Rg = 10 , Tj = 125 C
Inductive load
VCC 360 V , VGE = 15 V
Tj= 150 C
Switching Time Test Circuit
Waveform
Diode clamp
Rg
L
D.U.T
VGE
90%
VCC
www.DataSheet.net/
IC
90%
10%
90%
10%
td(off)
tf
10%
td(on) tr
R07DS0824EJ0001 Rev.0.01
Jul 05, 2012
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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