|
Renesas |
Preliminary Datasheet
RJH60M6DPQ-A0
600 V - 40 A - IGBT
Application: Inverter
R07DS0537EJ0100
Rev.1.00
Sep 02, 2011
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
80
40
160
50
200
260
0.48
1.07
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0537EJ0100 Rev.1.00
Sep 02, 2011
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60M6DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Short circuit withstand time
Symbol
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
tsc
Min
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
6
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
VF —
trr —
Preliminary
Typ
—
—
—
1.8
2.2
2500
140
80
104
15
45
55
40
150
80
8
1.3
100
Max
5
±1
7
2.3
—
—
—
—
—
—
—
—
—
—
—
—
1.8
—
(Ta = 25°C)
Unit Test Conditions
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 40 A, VGE = 15 V Note3
V IC = 80 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 40 A
ns VCC = 300 V, VGE = 15 V
ns IC = 40 A
ns Rg = 5
ns (Inductive load)
s Tc = 100 C
VCC 360 V, VGE = 15 V
V IF = 40 A Note3
ns IF = 40 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0537EJ0100 Rev.1.00
Sep 02, 2011
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
|