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Renesas |
Preliminary Datasheet
RJH60M1DPP-M0
600V - 8A - IGBT
Application: Inverter
R07DS0528EJ0300
Rev.3.00
May 25, 2012
Features
Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (75 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
20
8
32
30
4.1
7.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 1 of 9
RJH60M1DPP-M0
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V(BR)CES
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
Min
600
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
FRD Forward voltage
VF —
FRD reverse recovery time
trr —
FRD reverse recovery charge
Qrr —
FRD peak reverse recovery current Irr —
Notes: 3. Pulse test.
Preliminary
Typ
—
—
—
—
1.9
2.8
275
25
10
20.5
3
11.5
30
12
55
70
0.08
0.09
0.17
8
1.4
75
0.1
3.0
Max
—
5
±1
7
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
—
—
(Ta = 25°C)
Unit Test Conditions
V IC =10 A, VGE = 0
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 8 A, VGE = 15 V Note3
V IC =16 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 8 A
ns VCC = 300 V
ns VGE = 15 V
ns IC = 8 A
ns Rg = 5
mJ (Inductive load)
mJ
mJ
s Tc = 100 C
VGE 360 V, VGE = 15 V
V IF = 8 A Note3
ns IF = 8 A
C diF/dt = 100 A/s
A
R07DS0528EJ0300 Rev.3.00
May 25, 2012
Page 2 of 9
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