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Renesas 로고
Renesas
RJH1CD6DPQ-E0 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJH1CD6DPQ-E0
1200V - 25A - IGBT
Application: Inverter
R07DS0518EJ0400
Rev.4.00
Jan 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
1200
30
50
25
75
25
75
297.6
0.42
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
R07DS0518EJ0400 Rev.4.00
Jan 19, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/


RJH1CD6DPQ-E0 데이터시트, 핀배열, 회로
RJH1CD6DPQ-E0
Electrical Characteristics
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Switching time
Short circuit withstand time
Symbol
ICES/IR
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
tsc
Min
4
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
VF
trr
Preliminary
Typ
2.0
1600
60
35
45
15
100
100
5
1.7
200
Max
5
±1
8
Unit
A
(Ta = 25°C)
Test Conditions
VCE = 1200 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 25 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
ns VCC = 600 V, VGE = 15 V
ns IC = 25 A
ns Rg = 5 
ns Inductive load
s VCC 720 V, VGE = 15 V
Tc 125°C
V IF = 25 A Note3
ns IF = 25 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0518EJ0400 Rev.4.00
Jan 19, 2012
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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