파트넘버.co.kr RJH1CV6DPQ-E0 데이터시트 PDF


RJH1CV6DPQ-E0 반도체 회로 부품 판매점

IGBT



Renesas 로고
Renesas
RJH1CV6DPQ-E0 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT
Application: Inverter
R07DS0524EJ0500
Rev.5.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/


RJH1CV6DPQ-E0 데이터시트, 핀배열, 회로
RJH1CV6DPQ-E0
Preliminary
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V(BR)CES
ICES/IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
Min
1200
4.5
Typ
1.8
2.6
1600
85
43
105
14
55
46
33
125
120
2.3
1.7
4.0
5
FRD forward voltage
FRD reverse recovery time
VF
trr
2.0
www.DataSheet.net/
180
FRD reverse recovery charge
Qrr — 0.63
FRD peak reverse recovery current Irr — 9.2
Notes: 3. Pulse test.
Max
5
±1
6.5
2.6
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 1200 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 30 A, VGE = 15 V Note3
V IC = 60 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 35 A
ns VCC = 600 V
ns VGE = 15 V
ns IC = 30 A
ns Rg = 5 
mJInductive load
mJ
mJ
s VCC 720 V, VGE = 15 V
Tc 125°C
V IF = 30 A Note3
ns IF = 30 A
C diF/dt = 100 A/s
A
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 2 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: Renesas

( renesas )

RJH1CV6DPQ-E0 igbt

데이터시트 다운로드
:

[ RJH1CV6DPQ-E0.PDF ]

[ RJH1CV6DPQ-E0 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RJH1CV6DPQ-E0

IGBT - Renesas