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PDF RJP60F4DPM Data sheet ( Hoja de datos )
| Número de pieza | RJP60F4DPM | |
| Descripción | N-Channel IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJP60F4DPM
600 V - 30 A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Tj
Tstg
Preliminary Datasheet
R07DS0586EJ0100
Rev.1.00
Nov 25, 2011
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
30
60
30
120
41.2
3.03
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP60F4DPM
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 μ
1 shot pulse
0.01
100 μ
1m
10 m
θj − c(t) = γs (t) • θj − c
θj − c = 3.03 °C/W, Tc = 25 °C
PDM
D=
PW
T
PW
T
100 m
1
10 10
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Diode clamp
L
D.U.T
Rg
VCC
Waveform
90%
VGE
www.DataSheet.co.kr
10%
90%
IC
VCE
10%
td(on) tr
ton
90%
10%
1%
td(off) tf ttail
toff
10%
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJP60F4DPM.PDF ] | |
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