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PDF RJP60F0DPM Data sheet ( Hoja de datos )
| Número de pieza | RJP60F0DPM | |
| Descripción | N-Channel IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJP60F0DPM
600 V - 25 A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
Preliminary Datasheet
R07DS0585EJ0100
Rev.1.00
Nov 25, 2011
C
G
1
2
3
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Tj
Tstg
1. Gate
2. Collector
3. Emitter
E
Ratings
600
±30
50
25
100
40
3.125
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP60F0DPM
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01 1 shot pulse
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 3.125°C/W, Tc = 25°C
PDM
1 m 10 m 100 m
D=
PW
T
PW
T
1 10 100
Pulse Width PW (s)
Switching Time Test Circuit
Diode clamp
L
Waveform
90%
VGE
10%
90%
90%
Rg
D.U.T
VCC
IC
www.DataSheet.co.kr
VCE
10%
td(on) tr
ton
10%
1%
td(off) tf ttail
toff
10%
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJP60F0DPM.PDF ] | |
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