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GB70NA60UF 반도체 회로 부품 판매점

Warp 2 Speed IGBT



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Vishay Siliconix
GB70NA60UF 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
600 V
70 A at 88 °C
2.4 V
70 A at 86 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Peak diode forward current
Gate to emitter voltage
IFM
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Document Number: 93103 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


GB70NA60UF 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GB70NA60UF
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 35 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 35 A, TJ = 125 °C
VGE = 15 V, IC = 70 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR IR = 1 mA
IC = 35 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 70 A, VGE = 0 V
IC = 35 A, VGE = 0 V, TJ = 125 °C
IC = 70 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.69
2.23
2.07
2.89
3.9
-9
1
0.07
-
1.80
2.13
1.35
1.70
0.1
0.02
-
MAX.
-
1.88
2.44
2.31
3.21
5
-
100
2.0
-
2.33
2.71
1.81
2.32
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge IC = 50 A, VCC = 400 V, VGE = 15 V
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Fall time
Reverse bias safe operating area
Diode reverse recovery time
tf
RBSOA
trr
TJ = 150 °C, IC = 120 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Diode peak reverse current
Diode recovery charge
Irr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Qrr
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
1.15
1.16
2.31
1.27
1.28
2.55
208
69
208
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 59 93
- 46
- 118 279
- 130 159
- 11 13
- 715 995
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93103
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/




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