GB200TS60NPBF 반도체 회로 부품 판매점
Ultrafast Speed IGBT
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 Vishay Siliconix |
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
600 V
209 A
2.6 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 minute
MAX.
600
209
142
400
400
178
121
± 20
781
438
2500
UNITS
V
A
V
W
V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 200 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 100 A
IC = 200 A
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.95
2.6
2.28
3.14
4.2
0.005
0.01
1.39
1.64
1.32
1.67
-
MAX.
-
2.1
2.84
2.5
3.48
6
0.2
15
1.78
2.2
1.69
2.30
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 25 °C
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 125 °C
TJ = 150 °C, IC = 400 A,
Rg = 27 Ω, VGE = 15 V to 0
TJ = 150 °C, VCC = 400 V, VP = 600 V,
Rg = 27 Ω, VGE = 15 V to 0
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 25 °C
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 125 °C
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
TYP.
3.65
6.9
10.55
3.8
7.8
11.6
507
133
538
92
Fullsquare
-
226
17
1900
290
25
3600
MAX.
-
-
-
-
-
-
-
-
-
-
-
260
20
2600
330
30
5000
UNITS
mJ
ns
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94503
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/
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