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GA300TD60S 반도체 회로 부품 판매점

Standard Speed IGBT



Vishay Siliconix 로고
Vishay Siliconix
GA300TD60S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GA300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Low VCE(on)
• Square RBSOA
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VCES
IC DC at TC = 25 °C
VCE(on) (typical) at 300 A, 25 °C
600 V
530 A
1.24 V
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
600
Continuous collector current
IC (1)
TC = 25 °C
TC = 80 °C
530
376
Pulsed collector current
ICM
800
Clamped inductive load current
ILM
800
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
219
145
Gate to emitter voltage
VGE
± 20
Maximum power dissipation (IGBT)
TC = 25 °C
PD
TC = 80 °C
1136
636
RMS isolation voltage
VISOL
Any terminal to case
(VRMS t = 1 s, TJ = 25 °C)
3500
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93362
Revision: 31-May-11
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


GA300TD60S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GA300TD60S
Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 300 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 150 A
VGE = 15 V, IC = 300 A
VGE = 15 V, IC = 150 A, TJ = 125 °C
VGE = 15 V, IC = 300 A, TJ = 125 °C
VCE = VGE, IC = 250 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IFM = 150 A
IFM = 300 A
IFM = 150 A, TJ = 125 °C
IFM = 300 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
2.9
-
-
-
-
-
-
-
TYP.
-
1.04
1.24
0.96
1.22
4.8
0.02
1.5
1.23
1.48
1.17
1.50
-
MAX.
-
1.15
1.45
1.06
1.42
6.3
0.75
10
1.39
1.75
1.33
1.77
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Eoff
IC = 300 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
Etot
-
-
-
Turn-on switching loss
Eon
-
Turn-off switching loss
Eoff
-
Total switching loss
Turn-on delay time
Rise time
Etot
td(on)
tr
IC = 300 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
-
-
-
Turn-off delay time
td(off)
-
Fall time
Reverse bias safe operating area
tf
RBSOA
TJ = 150 °C, IC = 800 A, VCC = 400 V
VP = 600 V, Rg = 22 VGE = 15 V to 0 V,
L = 500 μH
-
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 25 °C
Qrr
trr
Irr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 125 °C
Qrr
-
-
-
-
-
-
TYP.
9
90
99
23
133
156
442
301
406
1570
Fullsquare
150
43
3.9
236
64
8.6
MAX.
-
-
-
-
-
-
-
-
-
-
179
59
6.3
265
80
11.1
UNITS
mJ
ns
ns
A
μC
ns
A
μC
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 93362
Revision: 31-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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