|
|
PDF GA200NS61U Data sheet ( Hoja de datos )
| Número de pieza | GA200NS61U | |
| Descripción | Ultra-Fast Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GA200NS61U (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -94347
GA200NS61U
High Side Switch Chopper Module
Ultra-FastTM Speed IGBT
3
VCES = 600V
4
5
VCE(on) typ. = 1.8V
1 @VGE = 15V, IC = 200A
2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
200
400
400
400
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
www.irf.com
Typ.
—
—
0.1
—
—
200
Max.
0.20
0.35
—
4.0
3.0
—
Units
°C/W
N.m
g
1
11/06/01
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
40 VCC = 360V
VGE
TJ
=
=
15V
125
°C
IC = 200A
35
30
25
GA200NS61U
1000 RGG1=2=7OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 360V
100
10
IC = 400A
IC = 200A
IC = 100A
20
0
10 20 30 40 50
RG , Gate Resistance (O(hmΩ))
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
70 RG1==27OΩh;mRG2 = 0 Ω
TJ = 125° C
60 VCC = 360V
VGE = 15V
50
40
30
20
10
0
0 100 200 300 400
I C , Collector-to-emitter Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
600
VGE = 20V
500 TJ = 125°
VCE measured at terminal (Peak Voltage)
400
300
200
SAFE OPERATING AREA
100
0
0
100 200 300 400 500 600 700
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Reverse Bias SOA
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GA200NS61U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GA200NS61U | Ultra-Fast Speed IGBT | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |