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Vishay Siliconix
GA100TS120UPBF 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GA100TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
1200 V
182 A
2.25 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
ICM
ILM
IFM
VGE
VISOL
PD
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 93 °C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 85 °C
MAX.
1200
182
100
200
200
200
± 20
2500
520
270
- 40 to + 150
- 40 to + 125
UNITS
V
A
V
W
°C
Document Number: 94428
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


GA100TS120UPBF 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
GA100TS120UPbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
V(BR)CES
VCE(on)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage ΔVGE(th)/ΔTJ
Forward transconductance
gfe
IC = 1.25 mA
VCE = VGE, IC = 1.25 mA
VCE = 25 V, IC = 100 A
Pulse width 50 μs, single shot
Collector to emitter leaking current
Maximum diode forward voltage
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, IF = 100 A
VFM
VGE = 0 V, IF = 100 A, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
3.0
-
-
-
-
-
-
-
TYP.
-
2.25
2
4.4
- 12
136
0.03
4.2
3.3
3.2
-
MAX.
-
3
2.4
6.0
-
UNITS
V
mV/°C
-S
1.0
mA
10
4.0
V
3.8
250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during tb
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff(1)
Ets (1)
td(on)
tr
td(off)
tf
Eon
Eoff(1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
dI(rec)M/dt
VCC = 400 V
IC = 124 A
Rg1 = 15 Ω
Rg2 = 0 Ω
IC = 100 A
VCC = 720 V
VGE = ± 15 V
TJ = 25 °C
Rg1 = 15 Ω
Rg2 = 0 Ω
IC = 100 A
VCC = 720 V
VGE = ± 15 V
TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 100 A
Rg1 = 15 Ω
Rg2 = 0 Ω
VCC = 720 V
dI/dt = 1300 A/μs
Note
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
830
140
275
570
85
581
276
7.6
6.8
14.4
571
89
606
649
10
16
26
18 672
830
161
149
104
7664
1916
MAX.
1245
210
412
-
-
-
-
-
-
-
-
-
-
-
-
-
45
-
-
-
-
-
-
-
UNITS
nC
ns
mJ
ns
mJ
pF
ns
A
μC
A/μs
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94428
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/




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